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savantic semiconductor product specification silicon npn power transistors 2SC4804 d escription with ito-220 package high breakdown voltage applications switching regulator and high voltage switching applications high speed dc-dc converter applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 900 v v ceo collector-emitter voltage open base 600 v v ebo emitter-base voltage open collector 7 v i c collector current 3 a i cm collector current-peak 5 a i b base current 1 a p t total power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (ito-220) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC4804 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;i b =0 600 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 900 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 7 v v cesat collector-emitter saturation voltage i c =0.8a; i b =0.16a 0.6 v v besat base-emitter saturation voltage i c =0.8a; i b =0.16a 1.2 v i cbo collector cut-off current v cb =800v; i e =0 0.1 ma i ebo emitter cut-off current v eb =7v; i c =0 0.1 ma h fe dc current gain i c =0.8a ; v ce =5v 10
savantic semiconductor product specification 3 silicon npn power transistors 2SC4804 package outline fig.2 outline dimensions (unindicated tolerance:0.20 mm)

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